PART |
Description |
Maker |
A43L8316V-10 A43L8316V-8 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 CONNECTOR ACCESSORY POT 100K OHM THUMBWHEEL CERM ST
|
http:// NXP Semiconductors N.V. Maxwell Technologies, Inc
|
28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
LTC1876 |
High Efficiency, 2-Phase, Synchr., Dual, Step-Down Sw. Contr. W/ Step-Up Reg.
|
Linear
|
24WC128 CAT24WC128 CA24WC128PI-1.8TE13 CA24WC128KI |
128K-Bit I2C Serial CMOS E2PROM 128K-BitI2CSerialCMOSE2PROM 1.8V-6.0V 128K-bit IIC serial CMOS EEPROM 2.5V-6.0V 128K-bit IIC serial CMOS EEPROM
|
CatalystSemiconductor CATALYST[Catalyst Semiconductor]
|
CY27C128-120WMB CY27C128-150JC CY27C128-150WC CY27 |
128K (16K x 8-Bit) CMOS EPROM 128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 120 ns, PDIP28 128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 120 ns, PQCC32 128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 45 ns, PDIP28 128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 150 ns, PDIP28 128K (16K x 8-Bit) CMOS EPROM 16K X 8 UVPROM, 200 ns, CDIP28
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32 128K X 8 EEPROM 12V, 150 ns, PDSO32 128K X 8 EEPROM 12V, 150 ns, PQCC32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
KM68FS1000 KM68FR1000 |
128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM)的
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|